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| SMG2306 5.3A, 20V,RDS(ON) 32m[ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description A SC-59 Dim A Min 2.70 1.40 1.00 0.35 1.70 0.00 0.10 0.20 0.85 2.40 Max 3.10 1.60 1.30 0.50 2.10 0.10 0.26 0.60 1.15 2.80 The SMG2306 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-23 package is universally used for all commercial-industrial applications L 3 Top View S 2 B 1 B C D D G H C J K Features * Capable of 2.5V gate drive * Lower on-resistance H G J K L * Reliable and Rugged Gate Drain S D Applications * Power Management in Notebook Computer * Protable Equipment * Battery Powered System All Dimension in mm Source G Marking : 2306 S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@4.5V Continuous Drain Current, VGS@4.5V Pulsed Drain Current Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg 3 3 Symbol VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o o Ratings 20 12 5.3 4.3 10 1.38 0.01 -55~+150 Unit V V A A A W W / oC o C Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Rthj-a Ratings 90 Unit o C /W http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 4 SMG2306 Elektronische Bauelemente 5.3A, 20V,RDS(ON) 32m[ N-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25 C Unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 oC) Drain-Source Leakage Current (Tj=70 oC) o Symbol BVDSS BVDS/ Tj VGS(th) IGSS IDSS Min. 20 _ Typ. _ Max. _ _ Unit V V/ oC V nA uA uA Test Condition VGS=0V, ID=250uA Reference to 25 C,ID=1mA VDS=VGS, ID=250uA VGS= 12V VDS=20V,VGS=0 VDS=16V,VGS=0 VGS=10V, ID=5.5A VGS=4.5V, ID=5.3A o 0.1 _ _ _ _ _ _ 0.5 _ _ _ _ _ 1.2 100 1 10 30 35 50 90 Static Drain-Source On-Resistance 2 RDS(ON) _ _ _ _ m[ VGS=2.5V, ID=2.6A VGS=1.8V, ID=1A Total Gate Charge 2 Qg Qgs Qgd Td(ON) Tr Td(Off) Tf Ciss Coss Crss Gfs _ _ _ 8.7 1.5 3.6 6 14 18.4 2.8 603 144 111 13 _ _ _ _ Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time 2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance nC ID=5.3A VDS=10V VGS=4.5V _ _ _ _ _ _ _ VDS=15V ID=1A nS VGS=10V RG=2 [ RD=15[ _ _ _ _ _ _ pF VGS=0V VDS=15V f=1.0MHz _ _ S VDS=5V, ID=5.3A Source-Drain Diode Parameter Forward On Voltage 2 Reverse Recovery Time Reverse Recovery Charge Symbol VSD Trr Qrr Min. _ _ Typ. _ Max. 1.2 Unit V Test Condition IS=1.2A, VGS=0V. Is=5A,VGS=0V dl/dt=100A/uS 16.8 _ _ nS _ 11 nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse widthO 300us, dutycycleO2%. 3.Surface mounted on 1 inch2 copper pad of FR4 board; 270C/W when mounted on min. copper pad. http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 4 SMG2306 Elektronische Bauelemente 5.3A, 20V,R DS(ON) 32m [ N-Channel Enhancement Mode Power Mos.FET Characteristics Curve http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 4 SMG2306 Elektronische Bauelemente 5.3A, 20V,RDS(ON) 32m[ N-Channel Enhancement Mode Power Mos.FET http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 4 of 4 |
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